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AT29BV020 Datasheet

  • AT29BV020

  • 2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flas...

  • 10頁

  • ATMEL   ATMEL

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AT29BV020
Features
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Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 250 ns
Low Power Dissipation
15 mA Active Current
20
碌A(chǔ)
CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by
8 bits. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20
碌A(chǔ).
The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel鈥檚
Low Voltage Flash family of products.
(continued)
2 Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
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CMOS Flash
Memory
AT29BV020
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
TSOP Top View
PLCC Top View
Type 1
0402B
4-13

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