Digital Attenuator, 15 dB, 4-Bit
DC - 2 GHz
Features
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AT-210
V 2.00
SO-16
Attenuation 1-dB Steps to 15 dB
High Accuracy +/-3%
Temperature Stability +/-0.15 dB from -40擄C to +85擄C
Low Intermodulation Product: +50 dBm IP3
Low DC Power Consumption: 50 W
Low Cost SOIC16 Plastic Package
Tape and Reel Packaging Available
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Description
M/A-COM鈥檚 AT-210 is a 4-bit, 1-dB step GaAs MMIC digi-
tal attenuator in a low cost SOIC 16-lead surface mount
plastic package. The AT-210 is ideally suited for use where
high accuracy, fast switching, very low power consumption
and low intermodulation products are required. Typical
applications include radio, cellular, and wireless LANs, GPS
equipment and other Gain/Level Control circuits.
The AT-210 is fabricated with a monolithic GaAs MMIC
using a mature 1-micron process. The process features full
chip passivation for increased performance and reliability.
Ordering Information
Part Number
AT-210 PIN
AT-210TR
AT-210RTR
Package
SOIC 16-Lead Plastic Package
Forward Tape & Reel
Reverse Tape & Reel
Electrical Specifications, T
A
= +25擄C
Parameter
Reference Insertion Loss
Test Conditions
2
DC 鈥?0.1 GHz
DC 鈥?0.5 GHz
DC 鈥?1.0 GHz
DC 鈥?2.0 GHz
DC 鈥?1.0 GHz
DC 鈥?2.0 GHz
Unit
Min.
Typ.
Max
dB
0.9
1.2
dB
1.3
1.5
dB
1.5
1.8
dB
1.8
2.0
鹵(0.15 dB + 3% of Attenuation Setting in dB) dB
鹵(0.30 dB + 3% of Attenuation Setting in dB) dB
1.8:1
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
Input Power
0.05 GHz
Input Power
0.5 鈥?2.0 GHz
Measured Relative
to Input Power
(For two-tone Input Power Up to +5 dBm)
Measured Relative
to Input Power
(For two-tone Input Power Up to +5 dBm)
0.05 GHz
0.5 鈥?2.0 GHz
0.05 GHz
0.5 鈥?2.0 GHz
nS
nS
mV
dBm
dBm
dBm
dBm
dBm
dBm
10
15
18
22
28
49
72
45
50
Attenuation Accuracy
3
VSWR
Trise, Tfall
Ton, Toff
Transients
1 dB
Compression
IP2
IP3
1. Refer to 鈥淭ape and Reel Packaging鈥漇ection, or contact factory.
2. All measurements at 1 GHz in a 50鈩?system, unless otherwise specified.
3.Attenuation accuracy specifications apply with negative bias control and low inductance grounding.
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