Voltage Variable Absorptive
Attenuator, 800 - 1000 MHz
V 7.00
AT10-0009
Features
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SOW-16
Input IP3: +31 dBm Min. (Full Attenuation Range)
Input IP3 is
15 -20 dB
Better Than GaAs
Linear Operation: +20 dBm Min.
Plastic SOIC, Wide Body, SMT Package
38 dB Dynamic Range (With 30 mA Bias Current)
Single Control Voltage
50 ohm Impedance
Linear Driver, DR65-0002, Available
Test Boards are Available
Tape and Reel Packaging Available
Description
M/A-COM's AT10-0009 is a PIN diode based voltage
variable attenuator. This device is in a SOIC-16, wide body
plastic surface mount package. These attenuators have
linear operating power and input intercept point levels
15 - 20 dB better than GaAs FET MMIC voltage variable
attenuators. They are ideally suited for use where low
distortion, high linear operating power and high dynamic
range are required. These devices are optimized for the
GSM frequency band, but exhibit excellent performance
and repeatability over the entire specified frequency band.
The AT10-0009 is ideally suited for wireless
communications systems.
Package outline conforms to JEDEC standard MS-013AA.
Electrical Specifications: T
A
= 25擄C
Parameter
Insertion Loss
Attenuation
(Above Loss)
Frequency
Flatness
VSWR
Switching Speed
Linear Operation
Input IP
3
I
Control
Test Conditions
0 volts
12 mA bias current
0 to 30 dB attenuation
0 to 30 dB attenuation
50% Control to 90%/10% RF
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Two-tone inputs up to +10 dBm
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Frequency
800-1000 MHz
925 - 960 MHz
800-1000 MHz
925 - 960 MHz
800-1000 MHz
925 - 960 MHz
800-1000 MHz
925 - 960 MHz
800-1000 MHz
800-1000 MHz
800-1000 MHz
800-1000 MHz
Units
dB
dB
dB
dB
dB
dB
Ratio
Ratio
碌s
dBm
dBm
mA
Min
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30
33
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鈥?/div>
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+35
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Typical
3.5
3.3
-
38
1.5
0.4
1.6:1
1.4:1
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+20
+40
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Max
4.2
3.9
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2.5
0.8
2.0:1
1.7:1
10.0
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AT10-0009相關(guān)型號PDF文件下載
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