AT-64023 Datasheet

IC型號(hào)：
AT-64023
PDF描述：
Up to 4 GHz Linear Power Silicon Bipolar Transistor
文件大小：
47.10KB
PDF頁數(shù)：
4頁
芯片廠家：
AGILENT

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Up to 4 GHz Linear Power

Silicon Bipolar Transistor

Technical Data

AT-64023

Features

鈥?High Output Power:

27.5 dBm Typical P

1 dB

at 2.0 GHz

26.5 dBm Typical P

1 dB

at 4.0 GHz

鈥?High Gain at 1 dB

Compression:

12.5 dB Typical G

1 dB

at 2.0 GHz

9.5 dB Typical G

1 dB

at 4.0 GHz

鈥?35% Total Efficiency

鈥?Emitter Ballast Resistors

鈥?Hermetic, Metal/Beryllia

Stripline Package

Description

The AT-64023 is a high perfor-

mance NPN silicon bipolar

transistor housed in a hermetic

BeO flange package for good

thermal characteristics. This

device is designed for use in

medium power, wide band

amplifier and oscillator applica-

tions operating over VHF, UHF

and microwave frequencies.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metallization

in the fabrication of these devices.

The use of ion-implanted ballast

resistors ensures uniform current

distribution through the multiple

emitter fingers.

230 mil BeO Package

4-183

5965-8916E

數(shù)據(jù)列表
AT-64023
標(biāo)準(zhǔn)包裝
10
類別
分離式半導(dǎo)體產(chǎn)品
家庭
RF 晶體管 (BJT)
系列
-
晶體管類型
NPN
電壓 - 集電極發(fā)射極擊穿（最大）
20V
頻率 - 轉(zhuǎn)換
-
噪聲系數(shù)（dB典型值@頻率）
-
增益
-
功率 - 最大
3W
在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE)
20 @ 110mA，8V
電流 - 集電極 (Ic)（最大）
200mA
安裝類型
表面貼裝
封裝/外殼
4-SMD（230 密耳 BeO）
供應(yīng)商設(shè)備封裝
230 mil Be0
包裝
散裝
其它名稱
516-2370AT-64023-ND

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