Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42085
Features
鈥?High Output Power:
20.5 dBm Typical P
1 dB
at 2.0 GHz
鈥?High Gain at 1 dB
Compression:
14.0 dB Typical G
1 dB
at 2.0 GHz
鈥?Low Noise Figure:
2.0 dB Typical NF
O
at 2.0 GHz
鈥?High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
鈥?Low Cost Plastic Package
The 20 emitter finger interdigi-
tated geometry yields a medium
sized transistor with impedances
that are easy to match for low
noise and medium power applica-
tions. Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
鈩?/div>
up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42085 bipolar transistor is
fabricated using Hewlett-Packard鈥檚
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
85 Plastic Package
Description
Hewlett-Packard鈥檚 AT-42085 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42085 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
4-169
5965-8913E
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