AT-42035 Datasheet

IC型號：
AT-42035
PDF描述：
Up to 6 GHz Medium Power Silicon Bipolar Transistor
文件大小：
55.05KB
PDF頁數(shù)：
5頁
芯片廠家：
AGILENT

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Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Technical Data

AT-42035

Features

鈥?High Output Power:

21.0 dBm Typical P

1 dB

at 2.0 GHz

20.5 dBm Typical P

1 dB

at 4.0 GHz

鈥?High Gain at 1 dB

Compression:

14.0 dB Typical G

1 dB

at 2.0 GHz

9.5 dB Typical G

1 dB

at 4.0 GHz

鈥?Low Noise Figure:

1.9 dB Typical NF

at 2.0 GHz

鈥?High Gain-Bandwidth

Product:

8.0 GHz Typical f

鈥?Cost Effective Ceramic

Microstrip Package

different functions. The 20 emitter

finger interdigitated geometry

yields a medium sized transistor

with impedances that are easy to

match for low noise and medium

power applications. This device is

designed for use in low noise,

wideband amplifier, mixer and

oscillator applications in the VHF,

UHF, and microwave frequencies.

An optimum noise match near

鈩?/div>

up to 1 GHz, makes this

device easy to use as a low noise

amplifier.

The AT-42035 bipolar transistor is

fabricated using Hewlett- Packard鈥檚

10 GHz f

Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

35 micro-X Package

Description

Hewlett-Packard鈥檚 AT-42035 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-42035 is housed in a cost

effective surface mount 100 mil

micro-X package. The 4 micron

emitter-to-emitter pitch enables

this transistor to be used in many

4-159

5965-8911E

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