AT-41410 Datasheet

IC型號(hào)：
AT-41410
PDF描述：
Up to 6 GHz Low Noise Silicon Bipolar Transistor
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Up to 6 GHz Low Noise

Silicon Bipolar Transistor

Technical Data

AT-41410

Features

鈥?Low Noise Figure:

1.6 dB Typical at 2.0 GHz

3.0 dB Typical at 4.0 GHz

鈥?High Associated Gain:

14.0 dB Typical at 2.0 GHz

10.0 dB Typical at 4.0 GHz

鈥?High Gain-Bandwidth

Product:

8.0 GHz Typical f

鈥?Hermetic, Gold-ceramic

Microstrip Package

interdigitated geometry yields an

intermediate sized transistor with

impedances that are easy to match

for low noise and moderate power

applications. This device is de-

signed for use in low noise,

wideband amplifier, mixer and

oscillator applications in the VHF,

UHF, and microwave frequencies.

An optimum noise match near 50

鈩?/div>

at 1 GHz , makes this device easy

to use as a low noise amplifier.

The AT-41410 bipolar transistor is

fabricated using Hewlett-Packard鈥檚

10 GHz f

Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

100 mil Package

Description

Hewlett-Packard鈥檚 AT-41410 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-41410 is housed in a hermetic,

high reliability 100 mil ceramic

package. The 4 micron emitter-to-

emitter pitch enables this transis-

tor to be used in many different

functions. The 14 emitter finger

5965-8923E

4-104

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