SD1006
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The
ASI SD1006
is a High Frequency
Transistor for General Purpose
Amplifier Applications
.
MAXIMUM RATINGS
I
C
V
CEO
V
CBO
P
DISS
T
J
T
STG
胃
JC
400 mA
30 V
50 V
3.5 W @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +200 擄C
50 擄C/W
1 = EMITTER
2 = BASE
3 = COLLECTOR
NONE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CEO
h
FE
f
t
C
ob
C
ib
NF
NB
NF
BB
G
VE
X
MOD
2
NDO
T
C
= 25 擄C
TEST CONDITIONS
I
C
= 5.0 mA
I
C
= 100
碌A(chǔ)
I
E
= 100
碌A(chǔ)
V
CE
= 28 V
V
CE
= 15 V
V
CE
= 15 V
V
CB
= 30 V
V
EB
= 0.5 V
V
CE
= 10 V
V
CE
= 15 V
V
CE
= 15 V
V
CE
= 15 V
V
CE
= 15 V
MINIMUM
30
50
5.0
TYPICAL
MAXIMUM
UNITS
V
V
V
碌A(chǔ)
---
MHz
pF
pF
dB
dB
dB
dB
dB
I
C
= 50 mA
I
C
= 50 mA
f = 100 KHz
f = 100 KHz
f = 2000 MHz
f = 216 MHz
f = 216 MHz
P
out
= +45 dbmV
P
out
= +45 dbmV
30
1500
100
300
1800
2.5
8.0
2.7
7.0
7.2
-60
-60
3.5
10
8.0
6.8
-57
-50
I
C
= 10 mA
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1202
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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