MM8006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The
ASI MM8006
is Designed for
High Frequency Low Noise Amplifier
and Oscillator Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
50 mA
15 V
600 mW @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +200 擄C
1 = EMITTER
2 = BASE
3 = COLLECTOR
4 = CASE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
I
CBO
BV
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
t
C
ob
C
ib
N
F
G
pe
P
out
畏
T
C
= 25 擄C
NONE
TEST CONDITIONS
I
C
= 3.0 mA
I
C
= 1.0
碌A(chǔ)
V
CB
= 15 V
V
CB
= 15 V
I
E
= 10
碌A(chǔ)
V
CE
= 1.0 V
I
C
= 10 mA
I
C
= 10 mA
V
CE
= 10 V
V
CB
= 0 V
V
CB
= 10 V
V
EB
= 0.5 V
V
CE
= 6.0 V
V
CB
= 12 V
V
CB
= 15 V
I
C
= 1.0 mA
I
C
= 6.0 mA
I
C
= 8.0 mA
I
C
= 1.0 mA
I
B
= 1.0 mA
I
B
= 1.0 mA
I
C
= 4.0 mA
f = 100 MHz
f = 140 KHz
f = 140 KHz
f = 140 KHz
f = 60 MHz
f = 200 MHz
f = 500 MHz
T
A
= 150 擄C
MINIMUM TYPICAL MAXIMUM
10
15
0.01
1.0
3.0
25
0.4
1.0
1000
3.0
1.7
2.0
6.0
15
30
25
UNITS
V
V
碌
A
V
---
V
V
MHz
pF
pF
dB
dB
mW
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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