BLY92A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLY92A
is an NPN power transistor
designed for 138-175 MHz VHF communications.
It utilizes emitter ballasting to provide high VSWR
handling capability.
PACKAGE STYLE .380 4L STUD
.112x45擄
A
FEATURES:
鈥?/div>
Common Emitter, 28 V operation
鈥?/div>
P
G
= 10 dB at 10W/175 MHz
鈥?/div>
Omnigold鈩?/div>
Metalization System
鈥?/div>
High VSWR capability
B
C
E
脴C
E
B
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
胃
JC
O
D
H
I
J
1.0 A
65 V
35 V
4.0 V
13.0 W
-65 擄 C to +200 擄C
-65 擄C to +150 擄C
13.5 擄C/W
DIM
A
B
C
D
E
F
G
H
I
J
#8-32 UNC-2A
F
E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
h
FE
C
ob
P
G
畏
C
T
C
= 25擄C
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CC
= 28 V
P
IN
= 1.0 W
P
OUT
= 10 W
I
C
= 200 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
1.0
5.0
200
15
10
60
UNITS
V
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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