BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BAM120
is Designed to
operate in a collector modulated
VHF
Power Amplifier Applications up to 150
MHz
.
PACKAGE STYLE .500 4L FLG
FEATURES:
鈥?畏
C
= 65 % typ. @ 120 W/150 MHz
鈥?/div>
P
G
= 9.0 dB typ. @ 120 W/150 MHz
鈥?/div>
Omnigold鈩?/div>
Metalization System
MAXIMUM RATINGS
I
C
V
CES
V
EBO
P
DISS
T
J
T
STG
胃
JC
12 A
60 V
4.0 V
140 W @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +150 擄C
1.2 擄C/W
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10430
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
h
FE
C
OB
P
G
畏
C
V
CC
= 27 V
I
C
= 20 mA
I
C
= 50 mA
I
E
= 5.0 mA
V
CE
= 25 V
V
CE
= 27 V
T
C
= 25 擄C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
60
32
4.0
UNITS
V
V
V
I
C
= 3.5 A
f = 1.0 MHz
P
OUT
= 120 W
f = 150 MHz
15
240
9.0
65
100
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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