SRF820H
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI SRF820H
is Designed for
High Power Class C Amplifier
applications, in 225 to 400 MHz
Military Communication Equipment.
PACKAGE STYLE .500 6L FLG
C
A
4
D
1
2x 脴N
FU LL R
FEATURES:
鈥?/div>
Internal Input Matching Network
鈥?/div>
P
G
= 8.4 dB at 70 W/400 MHz
鈥?/div>
Omnigold鈩?/div>
Metalization System
鈥?/div>
Available in matched pairs and
quads
DIM
2
B
G
.725/18,42
F
3
E
K
H
M INIM UM
inches / m m
M
L
J
I
M A XIM UM
inches / m m
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
胃
JC
8.0 A
60 V
30 V
4.0 V
220 W @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +150 擄C
1.25 擄C/W
A
B
C
D
E
F
G
H
I
J
K
L
M
N
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10474
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
C
OB
P
G
P
OUT
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
T
C
= 25 擄C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
60
4.0
5.0
UNITS
V
V
V
mA
---
pF
dB
W
I
C
= 2.0 A
f = 1.0 MHz
P
IN
= 70 W
f = 400 MHz
20
80
80
8.4
70
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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NPN SILICON RF POWER TRANSISTOR
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