Advanced Switching Diode
ASD355-N
Silicon epitaxial planar type
Formosa MS
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
Features
Small surface mounting type
High reliability
R0.5 (0.02) Typ.
High speed ( t
rr
< 4 ns )
0.053 (1.35)
0.045 (1.15)
0.035 (0.9)
0.028 (0.7)
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cat hode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
SOD-323
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
t
p
< 1s
V
R
= 0
CONDITIONS
Symbol
V
RRM
I
FSM
I
FAV
P
V
T
j
T
STG
-55
MIN.
TYP.
MAX.
100
500.0
100
350
175
+175
UNIT
V
mA
mA
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward voltage
I
F
= 10mA
V
R
= 25V
Reverse current
V
R
= 25V , T
j
= 150
V
R
= 80V
Breakdown current
Diode capacitance
Thermal resistance
Reverse recovery time
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
R
= 0 , f = 1MHz , V
HF
= 50mV
Junction to ambient
I
F
=10mA, V
R
=6V, I
RR
= 0.1 X I
R
, R
L
=100
OHM
o
CONDITIONS
Symbol
V
F
I
R
MIN.
TYP.
MAX.
1.2
100
50
30
UNIT
V
nA
uA
uA
V
C
I
R
I
R
V
(BR)
C
D
R
th
JA
t
rr
100
4.0
pF
K/mW
4
ns
1
2
