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AS8F128K32Q Datasheet

  • AS8F128K32Q

  • 4096Kbits 128K x 32 Replacement with DSCC 5962-94716 | FLASH

  • 391.70KB

  • 22頁(yè)

  • ETC

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FLASH
Austin Semiconductor, Inc.
128K x 32 FLASH
FLASH MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
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SMD 5962-94716
MIL-STD-883
Fast Access Times: 60, 70, 90, 120 and 150ns
Operation with single 5V (鹵10%)
Compatible with JEDEC EEPROM command set
Any Combination of Sectors can be Erased
Supports Full Chip Erase
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Hardware Data Protection
Data\ Polling and Toggle Bits
Low Power consumption
Individual Byte Read/ Write Control
10,000 Program/Erase Cycles
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
GND
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
Vcc
A11
A12
A13
A14
A15
A16
CS1\
OE
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
NC
AS8F128K32
PIN ASSIGNMENT
(Top View)
68 Lead CQFP (Q & Q1)
NC
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
FEATURES
I/O 16
I/O 17
I/O 18
I/O 19
I/O 20
I/O 21
I/O 22
I/O 23
GND
I/O 24
I/O 25
I/O 26
I/O 27
I/O 28
I/O 29
I/O 30
I/O 31
OPTIONS
Timing
60ns
70ns
90ns
120ns
150ns
Package
Ceramic Quad Flat pack
Ceramic Quad Flat pack
Q
Q1
MARKINGS
-60
-70
-90
-120
-150
No. 703
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GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8F128K32 is a 4 Megabit
CMOS FLASH Memory Module organized as 128K x 32 bits. The
AS8F128K32 achieves high speed access (60 to 150 ns), low power
consumption and high reliability by employing advanced CMOS
memory technology.
The device is designed to be programmed in-system with the
standard system 5.0V V
CC
supply. A 12.0V V
PP
is not required for
program or erase operation. The device can also be programmed or
erased in standard EPROM programmers. To eliminate bus
contention the device has seperate chip enbaled (CEx\), write enable
(WEx\) and output enable (OE) controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated voltages
are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC
single-power-supply Flash standard. Commands are written to the
command register using standard microprocessor write timings.
Register contents serve as input to an internal state machine that
AS8F128K32
Rev. 2.5 7/03
controls the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program command
sequence. This invokes the Embedded Program algorithm鈥攁n internal
algorithm that automatically times the program pulse widths and
verifies proper cell margin.
Device erasure occurs by executing the erase command sequence.
This invokes the Embedded Erase algorithm鈥攁n internal algorithm
that automatically preprograms the array (if it is not already
programmed) before executing the erase operation. During erase, the
device automatically times the erase pulse widths and verifies proper
cell margin.
The host system can detect whether a program or erase operation
is complete by reading the I/O7 (Data\ Polling) and I/O6 (toggle)
status bits. After a program or erase cycle has been completed, the
device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased
and reprogrammed without affecting the data contents of other
sectors. The device is erased when shipped from the factory.
The hardware data protection measures include a low V
CC
detector automatically inhibits write operations during power
transitions. The hardware sector protection feature disables both
program and erase operations in any combination of the sectors of
memory, and is implemented using standard EPROM programmers.
The system can place the device into the standby mode. Power
consumption is greatly reduced in this mode.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM programming
mechanism of hot electron injection.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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