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AS7C251MPFD18A-166TQC Datasheet

  • AS7C251MPFD18A-166TQC

  • 2.5V 1M x 18 pipelined burst synchronous SRAM

  • 510.48KB

  • 19頁

  • ALSC

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February 2005
廬
AS7C251MPFD18A
2.5V 1M x 18 pipelined burst synchronous SRAM
Features
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Organization: 1,048,576 x18 bits
Fast clock speeds to 166 MHz
Fast clock to data access: 3.5/3.8 ns
Fast OE access time: 3.5/3.8 ns
Fully synchronous register-to-register operation
Double-cycle deselect
Asynchronous output enable control
Available 100-pin TQFP package
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Individual byte write and global write
Multiple chip enables for easy expansion
2.5V core power supply
Linear or interleaved burst control
Snooze mode for reduced power-standby
Common data inputs and data outputs
Logic block diagram
LBO
CLK
ADV
ADSC
ADSP
A[19:0]
CLK
CS
CLR
Burst logic
Q
20
CS
Address
D
20
18 20
1M
x
18
Memory
array
18
18
register
CLK
GWE
BW
b
BWE
BW
a
CE0
CE1
CE2
D
DQb
Q
CLK
D
DQa
Q
Byte Write
registers
Byte Write
registers
CLK
D
2
OE
CE
CLK
D
ZZ
Enable
register
Q
Output
registers
CLK
Input
registers
CLK
Power
down
Enable
Q
delay
register
CLK
OE
18
DQ[a,b]
Selection guide
-166
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
6
166
3.5
290
85
40
-133
7.5
133
3.8
270
75
40
Units
ns
MHz
ns
mA
mA
mA
2/10/05, v. 1.2
Alliance Semiconductor
1 of 19
Copyright 漏 Alliance Semiconductor. All rights reserved.

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