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AS7C251MNTF36A-10TQI Datasheet

  • AS7C251MNTF36A-10TQI

  • 2.5V 1M x 32/36 Flowthrough SRAM with NTD

  • 18頁

  • ALSC

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December 2004
廬
AS7C251MNTF32A
AS7C251MNTF36A
2.5V 1M 脳 32/36 Flowthrough SRAM with NTD
TM
Features
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Organization: 1,048,576 words 脳 32 or 36 bits
NTD
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architecture for efficient bus operation
Fast clock to data access: 7.5/8.5/10 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous operation
Flow-through mode
Asynchronous output enable control
Available in 100-pin TQFP package
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Byte write enables
Clock enable for operation hold
Multiple chip enables for easy expansion
2.5V core power supply
Self-timed write cycles
Interleaved or linear burst modes
Snooze mode for standby operation
Logic block diagram
A[19:0]
20
D
Address
register
Burst logic
Q
20
CLK
CE0
CE1
CE2
R/W
BWa
BWb
BWc
BWd
ADV / LD
LBO
ZZ
D
Q
20
Write delay
addr. registers
CLK
Control
logic
CLK
Write Buffer
CLK
1M x 32/36
SRAM
Array
DQ[a,b,c,d]
32/36
D
Data
Q
Input
Register
CLK
32/36
32/36
32/36
32/36
CLK
CEN
OE
Output
Buffer
32/36
OE
DQ[a,b,c,d]
Selection guide
-75
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
8.5
7.5
325
140
90
-85
10
8.5
300
130
90
-10
12
10
275
130
90
Units
ns
ns
mA
mA
mA
12/23/04, v 1.1
Alliance Semiconductor
P. 1 of 18
Copyright 漏 Alliance Semiconductor. All rights reserved.

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