AS6VA25616-TI Datasheet

IC型號(hào)：
AS6VA25616-TI
PDF描述：
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with ...
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October 2000

廬

AS6VA25616

2.7V to 3.3V 256K 脳 16 Intelliwatt鈩?low-power CMOS SRAM with one chip enable

Features

鈥?AS6VA25616

鈥?Intelliwatt鈩?active power circuitry

鈥?Industrial and commercial temperature ranges available

鈥?Organization: 262,144 words 脳 16 bits

鈥?2.7V to 3.3V at 55 ns

鈥?Low power consumption: ACTIVE

- 132 mW at 3.3V and 55 ns

鈥?1.2V data retention

鈥?Equal access and cycle times

鈥?Easy memory expansion with CS, OE inputs

鈥?Smallest footprint packages

鈥?ESD protection

鈮?/div>

2000 volts

鈥?Latch-up current

鈮?/div>

200 mA

- 48-ball FBGA

- 400-mil 44-pin TSOP II

鈥?Low power consumption: STANDBY

- 66 碌W max at 3.3V

Logic block diagram

A12

A13

I/O1鈥揑/O8

I/O9鈥揑/O16

Row Decoder

256K 脳 16

Array

(4,194,304)

Pin arrangement (top view)

44-pin 400-mil TSOP II

I/O16

I/O1

I/O15

I/O2

I/O14

I/O3

I/O13

I/O4

I/O5

I/O12

I/O6

I/O11

I/O7

I/O10

I/O8

I/O9

A17

A16

A15

A10

A11

A14

A12

A13

I/O

buffer

Control circuit

Column decoder

A10

A11

A14

A15

A16

A17

48-CSP Ball-Grid-Array Package

I/O9

I/O10

I/O15

I/O16

I/O11

I/O12

I/O13

I/O14

A17

A14

A12

A16

A15

A13

A10

I/O2

I/O4

I/O5

I/O6

A11

I/O1

I/O3

I/O7

I/O8

Selection guide

Range

Product

AS6VA25616

Min

(V)

2.7

Typ

(V)

3.0

Max

(V)

3.3

Speed

(ns)

Power Dissipation

Operating (I

)

Max (mA)

Standby (I

SB1

)

Max (

碌

10/6/00

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AS6VA25616-TI

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