SRAM
Austin Semiconductor, Inc.
512K x 8 SRAM
3.3 VOLT HIGH SPEED SRAM with
CENTER POWER PINOUT
AVAILABLE AS MILITARY
SPECIFICATIONS
鈥IL-STD-883 for Ceramic
鈥xtended Temperature Plastic (COTS)
AS5LC512K8
PIN ASSIGNMENT
(Top View)
36-Pin PSOJ (DJ)
36-Pin CLCC (EC)
FEATURES
鈥?Ultra High Speed Asynchronous Operation
鈥?Fully Static, No Clocks
鈥?Multiple center power and ground pins for improved
noise immunity
鈥?Easy memory expansion with CE\ and OE\
options
鈥?All inputs and outputs are TTL-compatible
鈥?Single +3.3V Power Supply +/- 0.3%
鈥?Data Retention Functionality Testing
鈥?Cost Efficient Plastic Packaging
鈥?Extended Testing Over -55潞C to +125潞C for plastics
36-Pin Flat Pack (F)
OPTIONS
鈥?Timing
12ns access
15ns access
20ns access
鈥?Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
Industrial (-40
o
C to +85
o
C)
鈥?Package(s)
Ceramic Flatpack
Plastic SOJ (400 mils wide)
Ceramic LCC
鈥?2V data retention/low power
MARKING
-12
-15
-20
XT
IT
F
DJ
EC
L
No. 307
No. 210
GENERAL DESCRIPTION
The AS5LC512K8 is a 3.3V high speed SRAM. It offers
flexibility in high-speed memory applications, with chip enable (CE\)
and output enable (OE\) capabilities. These features can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +3.3V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5LC512K8DJ offers the convenience and reliability of the
AS5LC512K8 SRAM and has the cost advantage of a plastic
encapsulation.
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS5LC512K8
Rev. 1.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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