August 2001
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鈥?Organization: 4,194,304 words 脳 4 bits
鈥?High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
鈥?Low power consumption
- Active: 495 mW max
- Standby: 5.5 mW max, CMOS I/O
鈥?Fast page mode
鈥?Refresh
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1Q
- RAS-only or CAS-before-RAS refresh
鈥?TTL-compatible, three-state I/O
鈥?4 separate CAS pins allow for separate I/O operation
鈥?JEDEC standard package
- 300 mil, 28-pin SOJ
- 300 mil, 28-pin TSOP
鈥?Latch-up current
鈮?/div>
200 mA
鈥?ESD protection
鈮?/div>
2000 V
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Pin(s)
A0 to A11
RAS
CAS0 to CAS3
WE
I/O0 to I/O3
OE
V
CC
GND
Description
Address inputs
Row address strobe
Column address strobe
Write enable
Input/output
Output enable
Power
Ground
AS4C4M4F1Q
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Symbol
Maximum RAS access time
Maximum column address access time
Maximum CAS access time
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
t
RAC
t
CAA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC5
AS4C4M4F1Q-50
50
25
12
13
85
20
135
2.0
AS4C4M4F1Q-60
60
30
15
15
100
24
120
2.0
Unit
ns
ns
ns
ns
ns
ns
mA
mA
3/22/02; v.1.3
Alliance Semiconductor
AS4C4M4F1Q
P. 1 of 14
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