PDF預覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10
• 11
• 12
• 13
• 14
• 15
• 16
• 17
• 18
• 19
• 20
• 21
• 22
• 23
• 24

AS4C256K16E0

廬

5V 256K脳16 CMOS DRAM (EDO)

Features

鈥?Organization: 262,144 words 脳 16 bits

鈥?High speed

- 30/35/50 ns RAS access time

- 16/18/25 ns column address access time

- 7/10/10/10 ns CAS access time

鈥?Low power consumption

- Active: 500 mW max (AS4C256K16E0-25)

- Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)

鈥?EDO page mode

鈥?Refresh

- 512 refresh cycles, 8 ms refresh interval

- RAS-only or CAS-before-RAS refresh or self-refresh

- Self-refresh option is available for new generation device

only. Contact Alliance for more information.

鈥?Read-modify-write

鈥?TTL-compatible, three-state I/O

鈥?JEDEC standard packages

- 400 mil, 40-pin SOJ

- 400 mil, 40/44-pin TSOP II

鈥?5V power supply

鈥?Latch-up current > 200 mA

Pin arrangement

SOJ

Vcc

I/O0

I/O1

I/O2

I/O3

Vcc

I/O4

I/O5

I/O6

I/O7

NC

NC

WE

RAS

NC

A0

A1

A2

A3

Vcc

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

NC

LCAS

UCAS

OE

A8

A7

A6

A5

A4

GND

V

CC

I/O0

I/O1

I/O2

I/O3

V

CC

I/O4

I/O5

I/O6

I/O7

Pin designation

TSOP II

1

2

3

4

5

6

7

8

9

10

44

43

42

41

40

39

38

37

36

35

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

Pin(s)

A0 to A8

RAS

Description

Address inputs

Row address strobe

Input/output

Output enable

Column address strobe, upper byte

Column address strobe, lower byte

Read/write control

Power (5V

鹵

0.5V)

Ground

I/O0 to I/O15

OE

UCAS

LCAS

AS4C256K16E0

NC

NC

WE

RAS

NC

A0

A1

A2

A3

V

CC

AS4C256K16E0

13

14

15

16

17

18

19

20

21

22

32

31

30

29

28

27

26

25

24

23

NC

LCAS

UCAS

OE

A8

A7

A6

A5

A4

GND

WE

V

CC

GND

Selection guide

Symbol

Maximum

RAS

access time

Maximum column address access time

Maximum

CAS

access time

Maximum output enable (

OE

) access time

Minimum read or write cycle time

Minimum EDO page mode cycle time

Maximum operating current

Maximum CMOS standby current

Shaded areas contain advance information.

AS4C256K16E0-30

30

16

10

10

65

12

180

2.0

AS4C256K16E0-35

35

18

10

10

70

14

160

2.0

AS4C256K16E0-50

50

25

10

10

85

25

140

2.0

Unit

ns

ns

ns

ns

ns

ns

mA

mA

t

RAC

t

CAA

t

CAC

t

OEA

t

RC

t

PC

I

CC1

I

CC2

4/11/01; v.1.1

Alliance Semiconductor

1 of 24

Copyright 漏 Alliance Semiconductor. All rights reserved.

next

AS4C256K16E0相關型號PDF文件下載

• 型號
  版本
  描述
  廠商
  下載
• AS4C4M4
  英文版
  16384Kbits 4M x 4 Replacement with DSCC 5962-n/a | DRAM
  ETC
  AS4C4M4
• AS4C14400
  英文版
  1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)
  ALSC [Alli...
  AS4C14400
• AS4C14405
  英文版
  1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)
  ALSC [Alli...
  AS4C14405
• AS4C4M4F0
  英文版
  5V 4M x 4 CMOS DRAM (Fast Page mode)
  ETC
  AS4C4M4F0
• AS4C4M4F0
  英文版
  5V 4M】4 CMOS DRAM (Fast Page mode)
  ALSC [Alli...
  AS4C4M4F0
• AS4C4M4F1
  英文版
  5V 4M x 4 CMOS DRAM (Fast Page mode)
  ETC
  AS4C4M4F1
• AS4C4M4F1
  英文版
  5V 4M】4 CMOS DRAM (Fast Page mode)
  ALSC [Alli...
  AS4C4M4F1
• AS4CM4EOQ
  英文版
  4M X 4 CMOS Quad CAS DRAM (EDO) family
  ALSC [Alli...
  AS4CM4EOQ
• AS4C1M16E5
  英文版
  5V 1M x 16 CMOS DRAM (EDO)
  ETC
  AS4C1M16E5
• AS4C1M16E5
  英文版
  5V 1M】16 CMOS DRAM (EDO)
  ALSC [Alli...
  AS4C1M16E5
• AS4C1M16F5
  英文版
  5V 1M X 16 CMOS DRAM
  ETC
  AS4C1M16F5
• AS4C1M16F5
  英文版
  5V 1M X 16 CMOS DRAM
  ETC [ETC]
  AS4C1M16F5
• AS4C4M4E1Q
  英文版
  4M x 4 CMOS QuadCAS DRAM (EDO) family
  ETC
  AS4C4M4E1Q
• AS4C4M4E1Q
  英文版
  4M X 4 CMOS Quad CAS DRAM (EDO) family
  ALSC [Alli...
  AS4C4M4E1Q
• AS4C4M4EOQ
  英文版
  4M x 4 CMOS QuadCAS DRAM (EDO) family
  ETC
  AS4C4M4EOQ
• AS4C125988...
  英文版
  256K x 1 DRAM
  AUSTIN [Au...
  AS4C1259883C
• AS4C256K16...
  英文版
  5V 256Kx16 CMOS DRAM (EDO)
  ALSC
  AS4C256K16E0
• AS4C256K16...
  英文版
  5V 256Kx16 CMOS DRAM (EDO)
  ALSC [Alli...
  AS4C256K16E0
• AS4C256K16...
  英文版
  5V 256K X 16 CMOS DRAM (Fast Page Mode)
  ALSC [Alli...
  AS4C256K16FO
• AS4C402488...
  英文版
  1 MEG x 1 DRAM
  AUSTIN [Au...
  AS4C4024883C

您可能感興趣的PDF文件資料

• AS4C8M16SA-6TIN
• AS4C256M16D3-12BIN
• AS4C14400
• AS4C128M16D3-12BAN
• AS4C2M32SA-7TCN
• AS4C64M16D2-25BIN
• AS4C64M16D3L-12BIN
• AS4C128M16D2A-25BIN
• AS4C16M16MD1-6BCN
• AS4C16M16S-7BCN
• AS4C1G8MD3L-12BCN
• AS4C1M16F5-60TC

熱門IC型號推薦

• ADM3311EARSZ
• ATMEGA32A-AU
• ADR03BRZ
• AQY212GH
• ADA-4643-TR1G
• AD8183ARU
• AT91R40008-66AU
• AOD4132
• ADP3168J
• AT27C010-12JC
• AK4182AVN-L
• AWT6264RM49P8