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Preliminary Information

March 2001

廬

AS29LV400

3V 512K x 8/256K 脳 16 CMOS Flash EEPROM

Features

鈥?Organization: 512Kx8/256Kx16

鈥?Sector architecture

- One 16K; two 8K; one 32K; and seven 64K byte sectors

- One 8K; two 4K; one 16K; and seven 32K word sectors

- Boot code sector architecture鈥擳 (top) or B (bottom)

- Erase any combination of sectors or full chip

鈥?Single 2.7-3.6V power supply for read/write operations

鈥?Sector protection

鈥?High speed 70/80/90/120 ns address access time

鈥?Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

鈥?Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified

sectors

鈥?Hardware

RES ET

pin

- Resets internal state machine to read mode

鈥?Low power consumption

- 200 nA typical automatic sleep mode current

- 200 nA typical standby current

- 10 mA typical read current

鈥?JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO; availabillity TBD

鈥?Detection of program/erase cycle completion

- DQ7

DATA

polling

- DQ6 toggle bit

- DQ2 toggle bit

- RY/

B Y

output

鈥?Erase suspend/resume

- Supports reading data from or programming data to a

sector not being erased

鈥?Low V

CC

write lock-out below 1.5V

鈥?10 year data retention at 150C

鈥?100,000 write/erase cycle endurance

Logic block diagram

RY/

V

CC

V

SS

Pin arrangement

48-pin TSOP

RE SE T

44-pin SO

RY/BY

NC

A17

A7

A6

A5

A4

A3

A2

A1

A0

CE

V

SS

OE

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

RESET

WE

A8

A9

A10

A11

A12

A13

A14

A15

A16

BY

Sector protect/

erase voltage

switches

Erase voltage

generator

NC

RY/BY

NC

A17

A7

A6

A5

A4

A3

A2

A1

DQ0鈥揇Q15

A15

A14

A13

A12

A11

A10

A9

A8

NC

NC

WE

NC

RESE T

WE

B Y TE

CE

OE

A-1

Program/erase

control

Command

register

Input/output

buffers

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

AS29LV40

Chip enable

Output enable

Logic

STB

Data latch

AS29LV40

Program voltage

generator

BY TE

V

SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V

CC

V

CC

detector

Timer

Address latch

STB

Y decoder

Y gating

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

X decoder

Cell matrix

A0鈥揂17

V

SS

A0

CE

DQ0

OE

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V

CC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ15/A-1

V

SS

BYTE

A16

Selection guide

29LV400-70

Maximum access time

Maximum chip enable access time

Maximum output enable access time

t

AA

t

CE

t

OE

70

70

30

29LV400-80

80

80

30

29LV400-90

90

90

35

29LV400-120

120

120

50

Unit

ns

ns

ns

3/20/01; V.0.9.3

Alliance Semiconductor

P. 1 of 25

Copyright 漏 Alliance Semiconductor. All rights reserved.

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