PHEMT GaAs IC High Power
SP4T Switch 0.1鈥?.5 GHz
AS192-300
Features
s
4 Symmetric RF Paths
s
Positive Voltage Control
s
High IP3
s
Excellent Harmonic Performance
s
Handles GSM Power Levels
s
Available in MLF-16 (4 x 4 mm) Package
0.067 (1.70 mm)
鹵 0.006 (0.15 mm)
0.067 (1.70 mm)
鹵 0.006 (0.15 mm)
SEATING
PLANE
16
1
MLF-16 (4 x 4 mm)
0.157 (4.00 mm) BSC
PIN 1
INDICATOR
0.148
(3.75 mm)
BSC
1
2
3
16
0.039 (1.00 mm) MAX.
0.148
(3.75 mm)
0.001
BSC
(0.025 mm)
鹵 0.001
0.157
12藲
(0.025 mm)
(4.00 mm)
MAX.
BSC
Description
The AS192-300 is a reflective SP4T switch. It is an ideal
switch for higher power applications. It can be used for
GSM dual band handset applications where both low loss,
low current and small size are critical parameters.
2
3
0.078
(1.95 mm) REF.
0.026 (0.65 mm) BSC
0.078 (1.95 mm) REF.
Electrical Specifications at 25擄C (0, +4.5 V)
Parameter
Insertion Loss
Ant-J
1
, J
2
, J
3
, J
4
Frequency
0.1鈥?.5
0.5鈥?.0
1.0鈥?.0
2.0鈥?.5
0.1鈥?.5
0.5鈥?.0
1.0鈥?.0
2.0鈥?.5
GHz
GHz
GHz
GHz
GHz
GHz
GHz
GHz
30
25
19
18
Min.
Typ.
0.90
0.95
1.00
1.10
34
29
23
21
1.3:1
1.4:1
Max.
1.1
1.1
1.2
1.3
Unit
dB
dB
dB
dB
dB
dB
dB
dB
Isolation
Ant-J
1
, J
2
, J
3
, J
4
VSWR
0.1鈥?.0 GHz
1.0鈥?.5 GHz
Operating Characteristics at 25擄C (0, +4.5 V)
Parameter
Switching Characteristics
Condition
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
13 dBm/Tone
34 dBm Input 900 MHz
V
Low
= 0
V
High
= +4.5 V @ 200
碌A(chǔ)
Max. for RF power > 30 dBm
V
High
= +3.0 V @ 200
碌A(chǔ)
Max. for RF power 20鈥?0 dBm
V
High
= +2.7 V @ 200
碌A(chǔ)
Max. for RF power < 20 dBm
Frequency
Min.
Typ.
50
100
50
+55
+65
Max.
Unit
ns
ns
mV
dBm
dBc
IP3
2nd and 3rd Harmonics
Control Voltages
Alpha Industries, Inc.
[781] 935-5150
鈥?/div>
Fax
[617] 824-4579
鈥?/div>
Email
sales@alphaind.com
鈥?/div>
www.alphaind.com
Specifications subject to change without notice. 2/01A
1
1
2
