GaAs IC High Isolation Positive Control
SPDT Switch DC鈥?.5 GHz
AS164-80
Features
I
Positive Voltage Control
I
High Isolation (50 dB @ 1.9 GHz)
I
Low DC Power Consumption
I
Base Station Synthesizer Switch
SSOP-16
0.025
(0.635 mm) TYP.
PIN 16
0.244 (6.20 mm)
0.228 (5.80 mm)
PIN 1
0.158 (4.00 mm)
0.150 (3.80 mm)
0.197 (5.00 mm)
0.189 (4.80 mm)
Description
The AS164-80 is a GaAs FET IC SPDT switch packaged
in an SSOP-16 plastic package for low cost commercial
applications. Ideal building block for base station dual band
applications where synthesizer isolation is critical. Use in
conjunction with the AS165-59 SPST switch to meet GSM
synthesizer isolation requirements.
0.068
(1.73 mm) MAX.
0.0196 X 45藲
CHAMFER
R 0.008
MIN.
R 0.013/0.008
0.0098
(0.0075 mm)
5藲 -15藲
0.010
(0.25 mm) TYP.
0.010 (0.25 mm)
0.004 (0.10 mm)
8藲 MAX.
Electrical Specifications at 25擄C (0, +5 V)
Parameter
1
Insertion
Loss
3
Frequency
2
DC鈥?.0 GHz
1.0鈥?.0 GHz
2.0鈥?.5 GHz
DC鈥?.0 GHz
2.0鈥?.5 GHz
DC鈥?.0 GHz
DC鈥?.5 GHz
44
32
Min.
Typ.
0.6
0.8
1.0
50
42
1.3:1
1.5:1
1.5:1
1.8:1
Max.
0.8
1.0
1.2
Unit
dB
dB
dB
dB
dB
Isolation
VSWR
4
Operating Characteristics at 25擄C (0, +5 V)
Parameter
Switching Characteristics
5
Condition
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
Two-tone Input Power +10 dBm
0.5鈥?.5 GHz
V
Low
= 0 to 0.2 V @ 20 碌A(chǔ) Max.
V
High
= +3 V @ 100 碌A(chǔ) Max. to +5 V @ 200 碌A(chǔ) Max.
V
S
= V
High
鹵 0.2 V
Frequency
Min.
Typ.
60
100
50
+41
Max.
Unit
ns
ns
mV
dBm
Intermodulation Intercept Point (IP3)
Control Voltages
1. All measurements made in a 50
鈩?/div>
system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/擄C.
4. Insertion loss state.
5. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
Alpha Industries, Inc.
[781] 935-5150
鈥?/div>
Fax
[617] 824-4579
鈥?/div>
Email
sales@alphaind.com
鈥?/div>
www.alphaind.com
Specifications subject to change without notice. 10/00A
1
1
2
