Low Thermal Resistance.
鈥?/div>
Optimized SOA for Superior Ruggedness.
Continuous Drain Current @ T
C
= 25擄C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25擄C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
P
E
R
1
IM
L
A
IN
All Ratings: T
C
= 25擄C unless otherwise specified.
ARF464A/B
UNIT
Volts
Y
R
200
200
15
鹵30
180
0.70
-55 to 150
300
Amps
Volts
Watts
擄C/W
擄C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 碌A(chǔ))
On State Drain Voltage
(I
D
(ON) = 7.5A, V
GS
= 10V)
MIN
TYP
MAX
UNIT
Volts
200
3.0
25
碌A(chǔ)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 7.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
250
鹵100
2
3
3.5
5
5
nA
mhos
050-5999 Rev - 7-2001
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1
2
3
4
