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ARF442 Datasheet

  • ARF442

  • N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

  • 59.25KB

  • 4頁(yè)

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D
TO-247
G
S
ARF442 200W 100V 13.56MHz
ARF443 200W 100V 13.56MHz
THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.
RF OPERATION
(
1-15MHz
)
POWER MOS IV
廬
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
鈥?/div>
Specified 100 Volt, 13.56 MHz Characteristics:
鈥?/div>
Output Power = 200 Watts.
鈥?/div>
Gain = 22dB (Typ.)
鈥?/div>
Efficiency = 73% (Typ.)
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
胃JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25擄C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25擄C
Junction to Case
鈥?/div>
Low Cost Common Source RF Package.
鈥?/div>
Very High Breakdown for Improved Ruggedness.
鈥?/div>
Low Thermal Resistance.
鈥?/div>
Nitride Passivated Die for Improved Reliability.
All Ratings: T
C
= 25擄C unless otherwise specified.
ARF442/443
UNIT
Volts
300
300
8
鹵30
167
0.75
-55 to 150
300
Amps
Volts
Watts
擄C/W
擄C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
碌A(chǔ))
1
MIN
TYP
MAX
UNIT
Volts
300
6
250
1000
鹵100
3.5
2
4.5
5
nA
mhos
Volts
碌A(chǔ)
V
DS
(ON) On State Drain Voltage
I
DSS
I
GSS
g
fs
V
GS
(TH)
(I
D
(ON) = 6.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
=
鹵30V,
V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 5.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy B芒t B4 Parc Cad茅ra Nord
050-4506 Rev C

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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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    N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
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