APTM20HM16FT
Full - Bridge
MOSFET Power Module
VBUS
Q1
Q3
V
DSS
= 200V
R
DSon
= 16mW max @ Tj = 25擄C
I
D
= 104A @ Tc = 25擄C
Application
路
Welding converters
路
Switched Mode Power Supplies
路
Uninterruptible Power Supplies
G1
S1
Q2
OUT1
OUT2
Q4
G3
S3
G2
S2
NTC1
0/VBU S
NTC2
G4
S4
Features
路
Power MOS 7
廬
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
路
Kelvin source for easy drive
路
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
路
Internal thermistor for temperature monitoring
路
High level of integration
Benefits
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Outstanding performance at high frequency operation
路
Direct mounting to heatsink (isolated package)
路
Low junction to case thermal resistance
路
Solderable terminals both for power and signal for
easy PCB mounting
路
Low profile
G3
S3
G4
S4
OUT2
VBUS
0/VBUS
OUT1
S1
G1
S2
G2
NTC2
NTC1
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25擄C
T
c
= 80擄C
Max ratings
200
104
77
416
鹵30
16
390
100
50
3000
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website 鈥?http://www.advancedpower.com
1鈥?
APTM20HM16FT 鈥?Rev 1
May, 2004
T
c
= 25擄C