m鈩?/div>
W
A
mJ
G3
S3
G4
S4
OUT2
VBUS
0/VBUS
OUT1
S1
G1
S2
G2
NTC2
NTC1
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25擄C
T
c
= 80擄C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1鈥?
APTM20HM16FTG 鈥?Rev 2
July, 2006
T
c
= 25擄C