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APTM20DHM08 Datasheet

  • APTM20DHM08

  • Asymmetrical - Bridge MOSFET Power Module

  • 6頁

  • ADPOW

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APTM20DHM08
Asymmetrical - bridge
MOSFET Power Module
V
DSS
= 200V
R
DSon
= 8mW max @ Tj = 25擄C
I
D
= 208A @ Tc = 25擄C
Application
路
路
路
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
路
Power MOS 7
廬
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
路
路
路
OUT1
G1
S1
VBUS
0/VBUS
Benefits
路
路
路
路
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S4
G4
OUT2
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25擄C
T
c
= 80擄C
Max ratings
200
208
155
832
鹵30
8
781
100
50
3000
Unit
V
A
V
mW
W
A
mJ
T
c
= 25擄C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website 鈥?http://www.advancedpower.com
1鈥?
APTM20DHM08 鈥?Rev 1 May, 2004

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