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APTM20AM08FTG Datasheet

  • APTM20AM08FTG

  • Phase leg MOSFET Power Module

  • 6頁

  • MICROSEMI

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APTM20AM08FTG
Phase leg
MOSFET Power Module
VBUS
Q1
NT C2
V
DSS
= 200V
R
DSon
= 8m鈩?typ @ Tj = 25擄C
I
D
= 208A @ Tc = 25擄C
Application
鈥?/div>
Welding converters
鈥?/div>
Switched Mode Power Supplies
鈥?/div>
Uninterruptible Power Supplies
Features
鈥?/div>
Power MOS 7
廬
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
鈥?/div>
Kelvin source for easy drive
鈥?/div>
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
鈥?/div>
Internal thermistor for temperature monitoring
鈥?/div>
High level of integration
Benefits
鈥?/div>
Outstanding performance at high frequency operation
鈥?/div>
Direct mounting to heatsink (isolated package)
鈥?/div>
Low junction to case thermal resistance
鈥?/div>
Solderable terminals both for power and signal for
easy PCB mounting
鈥?/div>
Low profile
鈥?/div>
RoHS Compliant
G1
S1
OUT
Q2
G2
S2
0/VBUS
NT C1
G2
S2
OUT
VB US
0/VBUS
OUT
S1
G1
S2
G2
NTC2
NTC1
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25擄C
T
c
= 80擄C
T
c
= 25擄C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1鈥?
APTM20AM08FTG 鈥?Rev 2
Max ratings
200
208
155
832
鹵30
10
781
100
50
3000
Unit
V
A
V
m鈩?/div>
W
A
July, 2006

APTM20AM08FTG 產(chǎn)品屬性

  • 1

  • 半導(dǎo)體模塊

  • FET

  • -

  • 2 N 溝道（半橋）

  • 標準型

  • 200V

  • 208A

  • 10 毫歐 @ 104A，10V

  • 5V @ 5mA

  • 280nC @ 10V

  • 14400pF @ 25V

  • 781W

  • 底座安裝

  • SP4

  • SP4

  • 散裝

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