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APTM120DA29TG Datasheet

  • APTM120DA29TG

  • Boost chopper MOSFET Power Module

  • 284.30KB

  • 6頁(yè)

  • MICROSEMI

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APTM120DA29TG
Boost chopper
MOSFET Power Module
VBUS
VBUS SENSE
NTC2
V
DSS
= 1200V
R
DSon
= 290m鈩?typ @ Tj = 25擄C
I
D
= 34A @ Tc = 25擄C
Application
鈥?/div>
AC and DC motor control
鈥?/div>
Switched Mode Power Supplies
鈥?/div>
Power Factor Correction
Features
鈥?/div>
Power MOS 7
廬
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
鈥?/div>
Kelvin source for easy drive
鈥?/div>
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
鈥?/div>
Internal thermistor for temperature monitoring
鈥?/div>
High level of integration
Benefits
鈥?/div>
Outstanding performance at high frequency operation
鈥?/div>
Direct mounting to heatsink (isolated package)
鈥?/div>
Low junction to case thermal resistance
鈥?/div>
Solderable terminals both for power and signal for
easy PCB mounting
鈥?/div>
Low profile
鈥?/div>
RoHS Compliant
CR1
OUT
Q2
G2
S2
0/VBU S
NTC1
G2
S2
OUT
VBUS
0/VBUS
OUT
VBUS
SENSE
S2
G2
NTC2
NTC1
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25擄C
T
c
= 80擄C
T
c
= 25擄C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1鈥?
APTM120DA29TG鈥?Rev 1
Max ratings
1200
34
25
136
鹵30
348
780
22
50
3000
Unit
V
A
V
m鈩?/div>
W
A
mJ
July, 2006

APTM120DA29TG 產(chǎn)品屬性

  • 1

  • 半導(dǎo)體模塊

  • FET

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 1200V（1.2kV）

  • 34A

  • 348 毫歐 @ 17A，10V

  • 5V @ 5mA

  • 374nC @ 10V

  • 10300pF @ 25V

  • 780W

  • 底座安裝

  • SP4

  • SP4

  • 散裝

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