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APTC80TA15PG Datasheet

  • APTC80TA15PG

  • Triple phase leg Super Junction MOSFET Power Module

  • 308.02KB

  • 6頁(yè)

  • MICROSEMI

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APTC80TA15PG
Triple phase leg
Super Junction MOSFET
V
DSS
= 800V
R
DSon
= 150m鈩?max @ Tj = 25擄C
I
D
= 28A @ Tc = 25擄C
Application
鈥?/div>
Welding converters
鈥?/div>
Switched Mode Power Supplies
鈥?/div>
Uninterruptible Power Supplies
鈥?/div>
Motor control
W
Power Module
VBUS1
VBUS2
VBUS3
G1
G3
G5
S1
U
S3
V
S5
Features
鈥?/div>
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
G2
G4
G6
S2
0/VBUS1
S4
0/VBUS2
S6
0/VBUS3
鈥?/div>
鈥?/div>
鈥?/div>
VBUS 1
VBUS 2
VBUS 3
G1
0/VBUS 1
S1
S2
G2
0/VBUS 2
G3
S3
S4
G4
0/VBUS 3
G5
S5
S6
G6
U
V
W
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Benefits
鈥?/div>
Outstanding performance at high frequency operation
鈥?/div>
Direct mounting to heatsink (isolated package)
鈥?/div>
Low junction to case thermal resistance
鈥?/div>
Solderable terminals both for power and signal for
easy PCB mounting
鈥?/div>
Very low (12mm) profile
鈥?/div>
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
鈥?/div>
Module can be configured as a three phase bridge
鈥?/div>
Module can be configured as a boost followed by a
full bridge
鈥?/div>
RoHS Compliant
Max ratings
800
28
21
110
鹵30
150
277
17
0.5
670
Unit
V
A
V
m鈩?/div>
W
A
mJ
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25擄C
T
c
= 80擄C
T
c
= 25擄C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
www.microsemi.com
1鈥?
APTC80TA15PG 鈥?Rev 1
July, 2006

APTC80TA15PG 產(chǎn)品屬性

  • 1

  • 半導(dǎo)體模塊

  • FET

  • -

  • 6 N 溝道（3 相切換電路）

  • 標(biāo)準(zhǔn)型

  • 800V

  • 28A

  • 150 毫歐 @ 14A，10V

  • 3.9V @ 2mA

  • 180nC @ 10V

  • 4507pF @ 25V

  • 277W

  • 底座安裝

  • SP6

  • SP6-P

  • 散裝

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