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APT80GP60J Datasheet

  • APT80GP60J

  • Volts:600V VF/Vce(ON):2.5V ID(cont):80Amps|Ultrafast IGBT Fa...

  • 6頁

  • ETC

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APT80GP60J
600V
POWER MOS 7 IGBT
The POWER MOS 7
廬
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
廬
E
G
C
E
OT
S
2
-2
7
"UL Recognized"
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
鈥?50 kHz operation @ 400V, 50A
鈥?20 kHz operation @ 400V, 72A
鈥?SSOA rated
ISOTOP
廬
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
All Ratings: T
C
= 25擄C unless otherwise specified.
APT80GP60J
UNIT
600
鹵20
鹵30
151
68
270
270A @ 600V
462
-55 to 150
300
Watts
擄C
Amps
Volts
@ T
C
= 25擄C
Switching Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.5
2.6
1.0
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25擄C)
2
I
CES
I
GES
mA
nA
Rev - 8-2002
050-7426
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
5
鹵100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT80GP60J 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • IGBT

  • POWER MOS 7®

  • PT

  • 單一

  • 600V

  • 2.7V @ 15V，80A

  • 151A

  • 1mA

  • 9.84nF @ 25V

  • 462W

  • 標準型

  • 無

  • 底座安裝

  • ISOTOP

  • ISOTOP?

  • APT80GP60JMIAPT80GP60JMI-ND

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