鈩?/div>
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
rss
"Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in 鏗倅back, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
APT6M100K
Single die MOSFET
D
G
S
FEATURES
鈥?Fast switching with low EMI/RFI
鈥?Low R
DS(on)
鈥?Ultra low C
rss
for improved noise immunity
鈥?Low gate charge
鈥?Avalanche energy rated
鈥?RoHS compliant
TYPICAL APPLICATIONS
鈥?PFC and other boost converter
鈥?Buck converter
鈥?Two switch forward (asymmetrical bridge)
鈥?Single switch forward
鈥?Flyback
鈥?Inverters
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25擄C
Continuous Drain Current @ T
C
= 100擄C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
6
4
20
鹵30
310
3
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
胃
JC
R
胃
CS
T
J
,T
STG
T
L
W
T
Characteristic
Total Power Dissipation @ T
C
= 25擄C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
0.07
1.2
10
1.1
-55
0.11
150
300
Min
Typ
Max
225
0.43
Unit
W
擄C/W
擄C
2-2007
050-8110
Rev A
oz
g
in路lbf
N路m
Torque
Mounting Torque ( TO-220 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
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