鈩?/div>
POWER MOS MOS 7
POWER 7 FREDFET
R
TM
S
G
D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
廬
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
廬
and Q
g
. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
鈥?Lower Input Capacitance
鈥?Lower Miller Capacitance
鈥?Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
1
廬
OT
S
2
-2
7
"UL Recognized"
ISOTOP
廬
鈥?Increased Power Dissipation
鈥?Easier To Drive
鈥?Popular SOT-227 Package
鈥?/div>
FAST RECOVERY BODY DIODE
D
G
S
All Ratings: T
C
= 25擄C unless otherwise specified.
APT6013JFLL
UNIT
Volts
Amps
600
39
156
鹵30
鹵40
460
3.68
-55 to 150
300
39
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/擄C
擄C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A(chǔ))
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
600
0.130
250
1000
鹵100
3
5
(V
GS
= 10V, I
D
= 19.5A)
Ohms
碌A(chǔ)
nA
Volts
8-2004
050-7070 Rev B
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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