鈩?/div>
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
rss
"Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in 鏗倅back, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
S
G
D
S
SO
T
2
-2
7
ISOTOP
廬
"UL Recognized"
file # E145592
APT58M80J
G
D
Single die MOSFET
S
FEATURES
鈥?Fast switching with low EMI/RFI
鈥?Low R
DS(on)
鈥?Ultra low C
rss
for improved noise immunity
鈥?Low gate charge
鈥?Avalanche energy rated
鈥?RoHS compliant
TYPICAL APPLICATIONS
鈥?PFC and other boost converter
鈥?Buck converter
鈥?Two switch forward (asymmetrical bridge)
鈥?Single switch forward
鈥?Flyback
鈥?Inverters
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25擄C
Continuous Drain Current @ T
C
= 100擄C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
58
36
325
鹵30
3725
43
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
胃
JC
R
胃
CS
T
J
,T
STG
V
Isolation
W
T
Characteristic
Total Power Dissipation @ T
C
= 25擄C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage
(50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
-55
2500
1.03
29.2
10
1.1
0.15
150
Min
Typ
Max
960
0.13
Unit
W
擄C/W
擄C
V
1-2007
050-8111
Rev A
oz
g
in路lbf
N路m
Torque
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
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