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APT5518BFLL Datasheet

  • APT5518BFLL

  • Volts:550V RDS(ON)0.18Ohms ID(cont):31Amps|FREDFETs ( fast b...

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APT5518BFLL
APT5518SFLL
550V 31A 0.180
W
BFLL
D
3
PAK
TO-247
POWER MOS 7
TM
FREDFET
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
鈥?Lower Input Capacitance
鈥?Lower Miller Capacitance
鈥?Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
SFLL
鈥?Increased Power Dissipation
鈥?Easier To Drive
鈥?TO-247 or Surface Mount D
3
PAK Package
鈥?/div>
FAST RECOVERY BODY DIODE
D
G
S
All Ratings: T
C
= 25擄C unless otherwise specified.
APT5518
UNIT
Volts
Amps
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
EC ION
T T
E A
C M
N R
A O
V F
D N
A
I
550
31
124
鹵30
鹵40
403
3.23
300
31
30
(Repetitive and Non-Repetitive)
1
4
Volts
Watts
W/擄C
擄C
Amps
mJ
-55 to 150
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
550
31
0.180
250
1000
鹵100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
碌A
nA
Volts
050-7197 Rev - 4-2002
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

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    Power MOS 7TM is a new generation of low loss, high voltage,...
    ADPOW
  • 英文版
    Power MOS 7TM is a new generation of low loss, high voltage,...
    ADPOW [Adv...
  • 英文版
    Power MOS 7TM is a new generation of low loss, high voltage,...
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