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APT50M75JLLU2 Datasheet

  • APT50M75JLLU2

  • Power MOS 7TM is a new generation of low loss, high voltage,...

  • 6頁

  • ADPOW

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APT50M75JLLU2
APT50M75JLLU2
500V
51A 0.075
W
S
G
D
K
POWER MOS 7
TM
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
鈥?Lower Input Capacitance
鈥?Lower Miller Capacitance
鈥?Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
OT
S
2
-2
7
"UL Recognized"
ISOTOP
D
G
S
鈥?Increased Power Dissipation
鈥?Easier To Drive
鈥?PFC "Boost" Configuration
K
All Ratings: T
C
= 25擄C unless otherwise specified.
APT50M75JLLU2
UNIT
Volts
Amps
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
C
TE TION
E A
C M
N R
VA FO
D N
A
I
(Repetitive and Non-Repetitive)
1
4
500
51
204
鹵30
鹵40
465
Volts
Watts
W/擄C
擄C
Amps
mJ
3.72
300
51
50
-55 to 150
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A(chǔ))
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
500
51
0.075
100
500
3
5
鹵100
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
碌A(chǔ)
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
050-7095 Rev - 10-2001

APT50M75JLLU2 產(chǎn)品屬性

  • 1

  • 半導體模塊

  • FET

  • POWER MOS 7®

  • MOSFET N 通道,金屬氧化物

  • 標準型

  • 500V

  • 51A

  • 75 毫歐 @ 25.5A,10V

  • 5V @ 1mA

  • 123nC @ 10V

  • 5590pF @ 25V

  • 290W

  • 底座安裝

  • SOT-227-4,miniBLOC

  • SOT-227

  • 散裝

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