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APT50M65B2FLL Datasheet

  • APT50M65B2FLL

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APT50M65B2FLL
APT50M65LFLL
POWER MOS 7
TM
FREDFET
B2FLL
500V 67A 0.065
W
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
鈥?Lower Input Capacitance
鈥?Increased Power Dissipation
鈥?Lower Miller Capacitance
鈥?Easier To Drive
鈥?Lower Gate Charge, Qg
鈥?Popular
T-MAX鈩?/div>
or TO-264 Package
鈥?/div>
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
T-MAX鈩?/div>
TO-264
LFLL
D
G
S
All Ratings: T
C
= 25擄C unless otherwise specified.
APT50M65
UNIT
Volts
Amps
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
C
E ION
T T
E A
C M
N R
A O
V F
D N
A
I
67
268
鹵30
鹵40
690
5.5
300
67
50
(Repetitive and Non-Repetitive)
1
4
500
Volts
Watts
W/擄C
擄C
Amps
mJ
-55 to 150
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
500
67
0.065
250
1000
鹵100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
碌A
nA
Volts
050-7031 Rev- 3-2001
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
= 鹵30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

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