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APT50GP60B2DF2 Datasheet

  • APT50GP60B2DF2

  • POWER MOS 7 IGBT

  • 202.40KB

  • 9頁

  • ADPOW

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TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT50GP60B2DF2
600V
POWER MOS 7 IGBT
廬
T-Max
TM
The POWER MOS 7
廬
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
鈥?200 kHz operation @ 400V, 28A
鈥?100 kHz operation @ 400V, 44A
鈥?SSOA rated
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
All Ratings: T
C
= 25擄C unless otherwise specified.
APT50GP60B2DF2
UNIT
600
鹵20
鹵30
@ T
C
= 25擄C
Volts
100
72
190
190A@600V
625
-55 to 150
300
Watts
擄C
Amps
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
@ T
C
= 150擄C
Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500碌A)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
750
2
6
2.7
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25擄C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
2
Volts
I
CES
I
GES
碌A
nA
4-2004
050-7436
Rev C
3000
鹵100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

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