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APT5012JN Datasheet

  • APT5012JN

  • N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

  • 64.61KB

  • 4頁(yè)

  • ADPOW

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D
S
G
D
S
G
S
2
T-
SO
27
APT5010JN
APT5012JN
500V
500V
48.0A 0.10
鈩?/div>
43.0A 0.12
鈩?/div>
ISOTOP
廬
"UL Recognized" File No. E145592 (S)
POWER MOS IV
廬
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
1
SINGLE DIE ISOTOP
廬
PACKAGE
All Ratings: T
C
= 25擄C unless otherwise specified.
APT
5010JN
APT
5012JN
UNIT
Volts
Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
500
48
192
鹵30
520
4.16
500
43
172
and Inductive Current Clamped
Volts
Watts
W/擄C
擄C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
碌A(chǔ))
On State Drain Current
2
MIN
APT5010JN
APT5012JN
APT5010JN
APT5012JN
APT5010JN
APT5012JN
TYP
MAX
UNIT
Volts
500
500
48
Amps
I
D
(ON)
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
2
43
0.10
Ohms
R
DS
(ON)
0.12
250
1000
鹵100
2
4
碌A(chǔ)
nA
Volts
I
DSS
I
GSS
V
GS
(TH)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
=
鹵30V,
V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
THERMAL CHARACTERISTICS
Symbol
R
螛JC
R
螛CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
UNIT
擄C/W
050-5037 Rev F
0.24
0.06
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy B芒t B4 Parc Cad茅ra Nord

APT5012JN 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • POWER MOS IV?

  • 托盤

  • 停產(chǎn)

  • N 通道

  • MOSFET（金屬氧化物）

  • 500 V

  • 43A（Tc）

  • 10V

  • 120 毫歐 @ 21.5A，10V

  • 4V @ 2.5mA

  • 370 nC @ 10 V

  • ±30V

  • 6500 pF @ 25 V

  • -

  • 520W（Tc）

  • -55°C ~ 150°C（TJ）

  • 底座安裝

  • ISOTOP?

  • SOT-227-4，miniBLOC

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