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APT4F120K Datasheet

  • APT4F120K

  • N-Channel FREDFET 1200V, 4A, 4.60ヘ Max,

  • 189.18KB

  • 4頁

  • MICROSEMI

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APT
4
F
120
K
1200V, 4A, 4.60惟 Max,
N-Channel FREDFET
Power MOS 8
鈩?/div>
is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
rr
, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
rss
/C
iss
result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO-220
APT4F120K
Single die FREDFET
G
D
S
FEATURES
鈥?Fast switching with low EMI
鈥?Low trr for high reliability
鈥?Ultra low Crss for improved noise immunity
鈥?Low gate charge
鈥?Avalanche energy rated
鈥?RoHS compliant
TYPICAL APPLICATIONS
鈥?ZVS phase shifted and other full bridge
鈥?Half bridge
鈥?PFC and other boost converter
鈥?Buck converter
鈥?Single and two switch forward
鈥?Flyback
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25擄C
Continuous Drain Current @ T
C
= 100擄C
Pulsed Drain Current
1
Gate - Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
Ratings
4
2.7
15
鹵30
310
2
V
mJ
A
A
Unit
Thermal and Mechanical Characteristics
Symbol
P
D
R
JC
R
CS
T
J
, T
STG
T
L
W
T
Characteristic
Total Power Dissipation @ T
C
= 25擄C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Min
-
-
-
-55
-
-
-
-
-
Typ
-
-
.11
-
-
0.07
2
-
-
Max
225
.56
-
150
300
-
-
10
1.1
Unit
W
擄C/W
擄C
oz
g
in路lbf
N路m
050-8163 Rev A 12 - 2007
Torque
Mounting Torque (TO-220 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com

APT4F120K 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道,金屬氧化物

  • 標準型

  • 1200V(1.2kV)

  • 4A

  • 4.6 歐姆 @ 2A,10V

  • 5V @ 500µA

  • 43nC @ 10V

  • 1385pF @ 25V

  • 225W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

  • APT4F120KMIAPT4F120KMI-ND

APT4F120K相關型號PDF文件下載

  • 型號
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    描述
    廠商
    下載
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    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 60A I(D) |...
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    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 60A I(D) |...
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    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 60A I(D) |...
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    ADPOW
  • 英文版
    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
    ADPOW [Adv...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 31A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 31A I(D) |...
  • 英文版
    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
    ADPOW
  • 英文版
    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
    ADPOW [Adv...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22.5A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22.5A I(D)...
  • 英文版
    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
    ADPOW
  • 英文版
    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
    apt
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP
    ETC

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