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APT35GP120B Datasheet

  • APT35GP120B

  • Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps|Ultrafast IGBT F...

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  • ETC

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APT35GP120B
1200V
POWER MOS 7 IGBT
The POWER MOS 7
廬
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
廬
TO-247
G
C
E
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
鈥?100 kHz operation @ 800V, 12A
鈥?50 kHz operation @ 800V, 20A
鈥?RBSOA rated
G
C
E
All Ratings: T
C
= 25擄C unless otherwise specified.
APT35GP120B
UNIT
1200
鹵20
鹵30
96
46
140
140A @ 960V
540
-55 to 150
300
Watts
擄C
Amps
Volts
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
@ T
C
= 25擄C
Reverse Bias Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250碌A(chǔ))
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
1200
3
4.5
2.9
2.8
250
2
6
3.9
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 35A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 35A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25擄C)
2
I
CES
I
GES
碌A(chǔ)
nA
Rev B 7-2002
050-7406
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
2500
鹵100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

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