APT34F60B
APT34F60S
600V, 34A, 0.21鈩?Max, trr 鈮?50ns
N-Channel FREDFET
Power MOS
is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t
rr
, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C
rss
/C
iss
result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
8
鈩?/div>
TO
-2
47
D
3
PAK
APT34F60B
APT34F60S
D
Single die FREDFET
G
S
FEATURES
鈥?Fast switching with low EMI
鈥?Low trr for high reliability
鈥?Ultra low Crss for improved noise immunity
鈥?Low gate charge
鈥?Avalanche energy rated
鈥?RoHS compliant
TYPICAL APPLICATIONS
鈥?ZVS phase shifted and other full full bridge
鈥?Half bridge
鈥?PFC and other boost converter
鈥?Buck converter
鈥?Single and two switch forward
鈥?Flyback
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25擄C
Continuous Drain Current @ T
C
= 100擄C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
34
21
124
鹵30
930
17
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
胃
JC
R
胃
CS
T
J
,T
STG
T
L
W
T
Characteristic
Total Power Dissipation @ T
C
= 25擄C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
0.22
6.2
10
1.1
-55
0.15
150
300
Min
Typ
Max
624
0.20
Unit
W
擄C/W
擄C
9-2006
050-8074
Rev A
oz
g
in路lbf
N路m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
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