APT25GP120B
1200V
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7
廬
IGBT provides a lower cost alternative to a Power
MOSFET.
TO-247
廬
G
C
E
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
鈥?100 kHz operation @ 800V,11A
鈥?50 kHz operation @ 800V, 20A
鈥?RBSOA Rated
G
C
E
All Ratings: T
C
= 25擄C unless otherwise specified.
APT25GP120B
UNIT
1200
鹵20
鹵30
75
36
144
144
462
-55 to 150
300
Watts
擄C
Amps
Volts
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
@ T
C
= 25擄C
Reverse Bias Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250碌A(chǔ))
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
1200
3
4.5
3.6
3.1
250
2
6
3.9
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25擄C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
2
I
CES
I
GES
碌A(chǔ)
nA
Rev A 7-2002
050-7411
2500
鹵100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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