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APT200GN60J Datasheet

  • APT200GN60J

  • Intergrated Gate Resistor: Low EMI, High Reliability

  • 202.16KB

  • 6頁

  • ADPOW

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TYPICAL PERFORMANCE CURVES
APT200GN60J
APT200GN60J
600V
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs
have ultra low V
CE(ON)
and are ideal for low frequency applications that require
absolute minimum conduction loss. Easy paralleling is a result of very tight
parameter distribution and a slightly positive V
CE(ON)
temperature coef鏗乧ient.
A built-in gate resistor ensures extremely reliable operation, even in the event
of a short circuit fault. Low gate charge simpli鏗乪s gate drive design and
minimizes losses.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
600V Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
10碌s Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
E
G
C
E
7
22
T-
SO
"UL Recognized"
ISOTOP
廬
C
G
E
Applications:
welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
All Ratings: T
C
= 25擄C unless otherwise speci鏗乪d.
APT200GN60J
UNIT
Volts
600
鹵20
250
110
600
600A @600V
568
-55 to 150
Amps
@ T
C
= 150擄C
Switching Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
擄C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 3.2mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
600
5
1.05
5.8
1.45
1.65
1.15
1.19
4
2
6.5
1.85
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 25擄C)
V
CE(ON)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 125擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125擄C)
I
CES
I
GES
R
GINT
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25擄C)
2
mA
nA
鈩?/div>
1-2005
050-7610
Rev A
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
Intergrated Gate Resistor
TBD
600
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT200GN60J 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • IGBT

  • -

  • 溝道和場截止

  • 單一

  • 600V

  • 1.85V @ 15V，200A

  • 283A

  • 25µA

  • 14.1nF @ 25V

  • 682W

  • 標(biāo)準(zhǔn)型

  • 無

  • 底座安裝

  • ISOTOP

  • ISOTOP?

  • APT200GN60JMIAPT200GN60JMI-ND

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