TYPICAL PERFORMANCE CURVES
APT15GP90B
APT15GP90B
900V
POWER MOS 7 IGBT
廬
TO-247
The POWER MOS 7
廬
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
鈥?100 kHz operation @ 600V, 9A
鈥?50 kHz operation @ 600V, 17A
鈥?SSOA Rated
E
C
G
E
All Ratings: T
C
= 25擄C unless otherwise specified.
APT15GP90B
UNIT
900
鹵20
鹵30
43
21
60
60A @ 900V
291
-55 to 150
300
Watts
擄C
Amps
Volts
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
@ T
C
= 150擄C
Switching Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250碌A)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
900
3
4.5
3.2
2.7
250
2
6
3.9
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25擄C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
2
Volts
I
CES
I
GES
碌A
nA
8-2004
050-7470
Rev C
2500
鹵100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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