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APT15GP60BDF1 Datasheet

  • APT15GP60BDF1

  • POWER MOS 7 IGBT

  • 130.28KB

  • 9頁

  • ADPOW

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APT15GP60BDF1
600V
POWER MOS 7 IGBT
TO-247
廬
The POWER MOS 7
廬
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
鈥?100 kHz operation @ 400V, 19A
鈥?200 kHz operation @ 400V, 12A
鈥?SSOA rated
E
C
G
E
All Ratings: T
C
= 25擄C unless otherwise specified.
APT15GP60BDF1
UNIT
600
鹵20
鹵30
56
27
65
65A @ 600V
250
-55 to 150
300
Watts
擄C
Amps
Volts
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
@ T
C
= 25擄C
Switching Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500碌A(chǔ))
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
500
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25擄C)
2
3000
鹵100
nA
I
GES
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7428
Rev B
4-2003
I
CES
碌A(chǔ)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125擄C)

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