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APT13GP120BDQ1G Datasheet

  • APT13GP120BDQ1G

  • POWER MOS 7 IGBT

  • 9頁

  • ADPOW

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TYPICAL PERFORMANCE CURVES
廬
APT13GP120BDQ1
APT13GP120BDQ1G*
APT13GP120BDQ1(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
廬
TO
-2
47
The POWER MOS 7
廬
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
鈥?Low Conduction Loss
鈥?Low Gate Charge
鈥?Ultrafast Tail Current shutoff
鈥?100 kHz operation @ 600V, 10A
鈥?50 kHz operation @ 600V, 16A
鈥?RBSOA Rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
All Ratings: T
C
= 25擄C unless otherwise speci鏗乪d.
APT13GP120BDQ1(G)
UNIT
Volts
1200
鹵20
41
20
50
50A @ 960V
250
-55 to 150
300
Amps
@ T
C
= 150擄C
Reverse Bias Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
擄C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500碌A(chǔ))
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25擄C)
MIN
TYP
MAX
Units
1200
3
4.5
3.3
3.0
500
2
2
6
3.9
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25擄C)
Volts
I
CES
I
GES
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
鹵100
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7446
APT Website - http://www.advancedpower.com
Rev B
5-2005
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125擄C)
碌A(chǔ)
3000

APT13GP120BDQ1G 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • POWER MOS 7®

  • PT

  • 1200V

  • 3.9V @ 15V，13A

  • 41A

  • 250W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-247-3

  • TO-247 [B]

  • 管件

  • APT13GP120BDQ1GMIAPT13GP120BDQ1GMI-ND

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