鈩?/div>
TM
POWER MOS IV
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T
C
= 25擄C unless otherwise specified.
APT1004RGN
UNIT
Volts
Amps
1000
3.3
13.2
鹵30
100
0.8
-55 to 150
300
Continuous Drain Current @ T
C
= 25擄C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25擄C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts
Watts
W/擄C
擄C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250碌A(chǔ))
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1000
3.3
4.00
250
1000
鹵100
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Ohms
碌A(chǔ)
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125擄C)
Gate-Source Leakage Current (V
GS
=
鹵30V,
V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
4
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
MIN
TYP
MAX
UNIT
Watts
100
100
3.3
Amps
050-0019 Rev B
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy B芒t B4 Parc Cad茅ra Nord
1
2
3
4
