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APM3095P Datasheet

  • APM3095P

  • P-Channel Enhancement Mode MOSFET

  • 9頁

  • ANPEC

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APM3095P
P-Channel Enhancement Mode MOSFET
Features
鈥?/div>
-30V/-6A , R
DS(ON)
=95m鈩?typ.) @ V
GS
=-10V
R
DS(ON)
=140m鈩?typ.) @ V
GS
=-4.5V
Pin Description
鈥?/div>
鈥?/div>
鈥?/div>
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-252 Package
G
D
S
Top View of TO-252
Applications
鈥?/div>
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
D
G
S
D
Ordering and Marking Information
APM 3095P
H a n d lin g C o d e
Tem p. R ange
P a c ka g e C od e
P-Channel MOSFET
P ackage C ode
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 擄 C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
A P M 3095P U :
A P M 3095P
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25擄C unless otherwise noted)
Rating
-30
鹵25
-12
-30
A
V
Unit
Maximum Drain Current 鈥?Continuous
Maximum Drain Current 鈥?Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
錚?/div>
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
1
www.anpec.com.tw
* Surface Mounted on FR4 Board, t
鈮?/div>
10 sec.

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